Ebeam lithography based nano-fabrication

100kV E-Beam Writer JBX-9500FSZ
Advanced silicon etching machine

Send us your design, we will finish all the fabrication for you based on our highly precise ebeam lithography (EBL) and advanced silicon etching (ASE) based silicon nano-fabrication, and with fast delivery schedule. Typical feature size limit of our nano-fabrication: ~40nm for EBL + etching process, 50~100nm for EBL + liftoff process (depends on metal thickness), as shown below.

Scanning electron microscope image of fabricated silicon inverse taper with tip width of 40nm.
Scanning electron microscope image of a fabricated plasmonic slot waveguide with 100nm gap and 100nm thick Au layer, coupled by silicon waveguide.

Use our matured library

We have matured library on silicon-on-insulator with 250nm thick top silicon-layer. We provide nano-fabrication on standard silicon-on-insulator platform and advanced silicon-on-insulator platform with Al mirror. Standard silicon-on-insulator platform can be used for optical communication, such as microwave photonics, while advanced silicon-on-insulator platform can be used for on-chip quantum photonics where coupling loss is critical. Typical specifications are shown as follows. 

Standard SOI platform

Typical components

Grating coupler

Strip waveguide

Mach–Zehnder interferometer 

Cross intersection

                              Thermal tunable phase shifter

Performances

coupling loss: <3.5 dB 

Propagation loss: <2.5dB/cm

Insertion loss: <0.1dB                                   

Insertion loss:~0.1dB/cross  Crosstalk: <-40dB

Tunability: > 2π

Advanced SOI platform

Typical components

Grating coupler

Strip waveguide

Mach–Zehnder interferometer 

Cross intersection

                              Thermal tunable phase shifter

Performances

coupling loss: <1.2 dB 

Propagation loss: <2.5dB/cm

Insertion loss: <0.1dB                                  

Insertion loss:~0.1dB/cross  Crosstalk: <-40dB

Tunability: > 2π

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